डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRLR3110Z | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRLR3110Z, IIRLR3110Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤14mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de |
INCHANGE |
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IRLR3110ZPBF | Power MOSFET Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
Description Specifically designed for Industrial appli |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |