डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRLR120N | Power MOSFET $GYDQFHG 3RZHU 026)(7
IRLR120N
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage |
Fairchild Semiconductor |
|
IRLR120N | Power MOSFET l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced p |
International Rectifier |
|
IRLR120N | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRLR120N, IIRLR120N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤185mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev |
INCHANGE |
|
IRLR120NPBF | Power MOSFET IRLR120NPbF IRLU120NPbF
l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated
l Lead-Free
Description Fifth Generation HEXFETs from Intern |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |