IRLML5203 डाटा शीट PDF( Datasheet )

PD - 93967 PROVISIONAL IRLML5203 HEXFET® Power MOSFET RDS(on) max (mΩ) 98@VGS = -10V 165@VGS = -4.5V l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Char

l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel MOSFETs from International Rectifier utilize adva

l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l RoHS Compliant, Halogen-Free Description These P-channel MOSFETs from International Rectif

VDS RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 98 mΩ 165 9.5 nC -3.0 A IRLML5203PbF-1 HEXFET® Power MOSFET G1 3D S2 Micro3TM Features Industry-standard pinout