डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRLIZ34G | POWER MOSFET www.DataSheet4U.com
|
International Rectifier |
|
IRLIZ34G | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRLIZ34G
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤50mΩ @VGS=5V ·Enhancement mode:
Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum L |
INCHANGE |
|
IRLIZ34G | Power MOSFET Power MOSFET
IRLIZ34G, SiHLIZ34G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 5.0 V
35 7.1 25 Single
0.050
TO-220 FULLPAK
D
G
GDS
S N-C |
Vishay |
www.DataSheet.in | 2017 | संपर्क |