डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRLI640G | ower MOSFET Power MOSFET
IRLI640G, SiHLI640G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 5.0 V
66 9.0 38 Single
0.18
TO-220 FULLPAK
D
G
GDS
S N-C |
Vishay |
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IRLI640G | Power MOSFET Previous Datasheet
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PD - 9.1237
IRLI640G
HEXFET® Power MOSFET
Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(ON) Specif |
International Rectifier |
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IRLI640GPBF | HEXFET Power MOSFET PD- 95654
IRLI640GPbF
Lead-Free
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IRLI640GPbF |
International Rectifier |
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