IRLI3705 डाटा शीट PDF( Datasheet )

Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum

l Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description Fifth Generation HEXFET

isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 1mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

 Logic –Level Gate Drive  Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm  Fully Avalanche Rated  Lead-Free IRLI

 Logic –Level Gate Drive  Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm  Fully Avalanche Rated  Lead-Free IRLI