IRLI2910 डाटा शीट PDF( Datasheet )

PD - 9.1384B PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Ava

isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 26mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus

• Lead-Free PD- 95652 IRLI2910PbF www.irf.com 1 7/26/04 IRLI2910PbF 2 www.irf.com IRLI2910PbF www.irf.com 3 IRLI2910PbF 4 www.irf.com IRLI2910PbF www.irf.com 5 IRLI2910PbF 6 www.irf.com IRLI2910Pb

IRLI2910PbF  Logic –Level Gate Drive  Advanced Process Technology  Ultra Low On-Resistance  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm 