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IRL630 | Power MOSFET $GYDQFHG 3RZHU 026)(7
IRL630
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operati |
Fairchild Semiconductor |
|
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PD -9.1255
IRL630
HEXFET ® Power MOSFET
Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at V GS = 4V & 5V 150°C Operating |
International Rectifier |
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IRL630 | Power MOSFET IRL630, SiHL630
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 40 5.5 24 Single
D
FEATURES
200 V 0.40
• Dynamic dV/dt Rating � |
Vishay |
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IRL630A | Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area |
Fairchild Semiconductor |
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IRL630PBF | HEXFET Power MOSFET PD- 95756
IRL630PbF
Lead-Free
www.irf.com
1
8/24/04
Free Datasheet http://www.datasheet4u.com/
IRL630PbF
2
www.irf.com
Free Datasheet http://www.datasheet4u.com/
IRL630PbF
www.irf.com
3
Free Da |
International Rectifier |
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IRL630S | Power MOSFET $GYDQFHG 3RZHU 026)(7
IRL630S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operati |
Fairchild Semiconductor |
|
IRL630S | POWER MOSFET Previous Datasheet
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Next Data Sheet
PD - 9.1254
IRL630S
HEXFET® Power MOSFET
Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Speci |
International Rectifier |
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