IRL3803V डाटा शीट PDF( Datasheet )

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G Description Advanced HEXFET® Power MOSFETs from Intern

isc N-Channel MOSFET Transistor IRL3803V，IIRL3803V ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot v

www.DataSheet4U.com PD - 94735 HEXFET® Power MOSFET l l l l l l l IRL3803VS IRL3803VL VDSS = 30V Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL3803VS) Low-profile through-hole (IRL38

l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175°C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-

www.DataSheet4U.com PD - 95955 IRL3803VPbF HEXFET® Power MOSFET l Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche

www.DataSheet4U.com PD - 94735 HEXFET® Power MOSFET l l l l l l l IRL3803VS IRL3803VL VDSS = 30V Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL3803VS) Low-profile through-hole (IRL38

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-