IRL3103 डाटा शीट PDF( Datasheet )

PD - 91337 IRL3103 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V R

isc N-Channel MOSFET Transistor IRL3103，IIRL3103 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot vari

PD 9.1608C IRL3103D1 FETKYTM MOSFET & SCHOTTKY RECTIFIER l l l l l Copackaged HEXFET® Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Sync

• Lead-Free PD - 94936 IRL3103D1PbF www.irf.com 1 1/12/04 IRL3103D1PbF 2 www.irf.com IRL3103D1PbF www.irf.com 3 IRL3103D1PbF 4 www.irf.com IRL3103D1PbF www.irf.com 5 IRL3103D1PbF TO-220AB Package

PD- 9.1558A IRL3103D1S FETKYTM MOSFET & SCHOTTKY RECTIFIER l l l l l Co-packaged HEXFET® Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For S

PD 9.1660 PRELIMINARY l l l l l IRL3103D2 D FETKYTM MOSFET & SCHOTTKY RECTIFIER Copackaged HEXFET® Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance

PD-95435 IRL3103D2PbF FETKYTM MOSFET & SCHOTTKY RECTIFIER l Copackaged HEXFET® Power MOSFET and Schottky Diode l Generation 5 Technology l Logic Level Gate Drive l Minimize Circuit Inductance l Ideal For Syn