डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRL2910S | Power MOSFET l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from Interna |
International Rectifier |
|
IRL2910S | N-Channel MOSFET Isc N-Channel MOSFET Transistor
IRL2910S
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for |
INCHANGE |
|
IRL2910SPbF | HEXFET Power MOSFET PD - 95149
IRL2910S/LPbF
l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
l Lead-Free Description |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |