IRL2910 डाटा शीट PDF( Datasheet )

PD - 91375B IRL2910 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.026Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from Interna

Isc N-Channel MOSFET Transistor ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de

PD - 95149 IRL2910S/LPbF l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description

• Lead-Free PD - 94993 IRL2910PbF www.irf.com 1 2/10/04 IRL2910PbF 2 www.irf.com IRL2910PbF www.irf.com 3 IRL2910PbF 4 www.irf.com IRL2910PbF www.irf.com 5 IRL2910PbF 6 www.irf.com IRL2910PbF ww

l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from Interna