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IRHNB8160 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
IRHNB8160

International Rectifier
RADIATION HARDENED POWER MOSFET
! ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Paramete
Datasheet



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