डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRGSL6B60KDPbF | Insulated Gate Bipolar Transistor PD - 95229C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Squar |
International Rectifier |
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IRGSL6B60KDPbF | Insulated Gate Bipolar Transistor | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |