डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRGS6B60K | INSULATED GATE BIPOLAR TRANSISTOR www.DataSheet4U.com
PD - 94575A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Tempe |
International Rectifier |
|
IRGS6B60KD | INSULATED GATE BIPOLAR TRANSISTOR www.DataSheet4U.com
PD - 94381E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB6B60KD IRGS6B60KD IRGSL6B60KD
VCES = 600V IC = 7.0A, TC=100°C
Features
• Low VCE (on) Non Punch |
International Rectifier |
|
IRGS6B60KD | INSULATED GATE BIPOLAR TRANSISTOR www.DataSheet4U.com
PD - 95229
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD
VCES = 600V IC = 7.0A, TC=100°C
Features
• Low VCE (on) Non Punc |
International Rectifier |
|
IRGS6B60KDPBF | Insulated Gate Bipolar Transistor PD - 95229C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Squar |
International Rectifier |
|
IRGS6B60KPBF | Insulated Gate Bipolar Transistor INSULATED GATE BIPOLAR TRANSISTOR
PD - 95644A
IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF
Features
• Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Pos |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |