डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRGP6690D-EPbF | Insulated Gate Bipolar Transistor VCES = 600V
IC = 90A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 75A
Applications • Welding • H Bridge Converters
IRGP6690DPbF IRGP6690D-EPbF
Insulated Gate Bipolar Transistor w |
International Rectifier |
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IRGP6690D-EPbF | Insulated Gate Bipolar Transistor | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |