डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRGP6650DPBF | Insulated Gate Bipolar Transistor
VCES = 600V IC = 50A, TC =100°C
IRGP6650DPbF IRGP6650D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C C
C
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = |
International Rectifier |
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IRGP6650DPBF | Insulated Gate Bipolar Transistor | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |