डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRGP4740D-EPbF | Insulated Gate Bipolar Transistor IRGP4740DPbF IRGP4740D-EPbF
VCES = 650V IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ(max) = 175°C
G
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
VCE(ON) typ. = 1.7V @ IC = 24A Applicatio |
International Rectifier |
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IRGP4740D-EPbF | Insulated Gate Bipolar Transistor | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |