डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRGP4640D-EPbF | Insulated Gate Bipolar Transistor VCES = 600V
IRGS4640DPbF IRGSL4640DPbF
IRGB4640DPbF IRGP4640D(-E)PbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
IC = 40A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C
G
VCE(ON) typ |
Infineon |
|
IRGP4640D-EPbF | INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V IC = 40A, TC = 100°C
IRGP4640DPbF IRGP4640D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
C
C
tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.60V @ IC = 24A
G |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |