डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRGP4630-EDPbF | Insulated Gate Bipolar Transistor IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 30A, TC =100°C
C CC C C
tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V |
International Rectifier |
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IRGP4630-EDPbF | Insulated Gate Bipolar Transistor | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |