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IRGBC30M-S | INSULATED GATE BIPOLAR TRANSISTOR Previous Datasheet
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PD - 9.1133
IRGBC30M-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" |
International Rectifier |
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IRGBC30M-S | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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