डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRG7PSH54K10DPbF | Insulated Gate Bipolar Transistor
IRG7PSH54K10DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 65A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.9V @ IC = 50A
G E
C
C G
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International Rectifier |
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IRG7PSH54K10DPbF | Insulated Gate Bipolar Transistor | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |