IRFZ48N डाटा शीट PDF( Datasheet )

Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Lead-Free Description Advanced HEXFET® Power M

PD - 9.1408B Advanced Process Technology Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power M

l l l l l l l Description Advanced Process Technology Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G IRFZ48NSPbF IR

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Lead-Free Description Advanced HEXFET® Power M

PD - 9.1408B Advanced Process Technology Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power M

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-