डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFZ46N | Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
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Description
Advanced HEXFET® Power MOSFETs from Intern |
International Rectifier |
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IRFZ46N | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFZ46N, IIRFZ46N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤16.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested |
INCHANGE |
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IRFZ46NL | POWER MOSFET PD - 91305C
Advanced Process Technology l Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
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HEXFET® Power MO |
International Rectifier |
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IRFZ46NLPbF | HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
IRFZ46NSPbF IRFZ46 |
International Rectifier |
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IRFZ46NPbF | Power MOSFETs l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs |
International Rectifier |
|
IRFZ46NS | POWER MOSFET PD - 91305C
Advanced Process Technology l Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l
HEXFET® Power MO |
International Rectifier |
|
IRFZ46NS | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to- |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |