IRFZ46 डाटा शीट PDF( Datasheet )

IRFZ46 HEXFET ® Power MOSFET Dynamic dv/dt Rating 175 Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS=50V RDS(on)=0.024Ω ID=50 * A Description Third Generation HEXF

Power MOSFET IRFZ46, SiHFZ46 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 50 VGS = 10 V 66 21 25 Single 0.024 TO-220 D S D G G S N-Channel MOSFET

l Advanced Process Technology l Surface Mount (IRFZ46S) l Low-profile through-hole (IRFZ46L) l 175°C Operating Temperature l Fast Switching G Description Third Generation HEXFETs from International Rectifier

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G Description Advanced HEXFET® Power MOSFETs from Intern

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFZ46N， IIRFZ46N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤16.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested

PD - 91305C Advanced Process Technology l Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l HEXFET® Power MO