डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFZ44N | Power MOSFET l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
l Lead-Free
Description
Advanced HEXFET® Power M |
International Rectifier |
|
IRFZ44N | N-Channel MOSFET www.DataSheet4U.com
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor |
NXP |
|
IRFZ44N | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ44N
FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 55V(Min) ·Static Drain-Source On-Resistan |
INCHANGE |
|
IRFZ44NL | Power MOSFET PD - 94153
Advanced Process Technology Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
IRFZ44NS IRFZ44NL
|
International Rectifier |
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IRFZ44NLPBF | Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
Description
Advanced HEXFET® P |
International Rectifier |
|
IRFZ44NPBF | Power MOSFET PD - 94787
IRFZ44NPbF
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
Advanced HEXFET® Power MOSFETs from I |
International Rectifier |
|
IRFZ44NS | N-Channel MOSFET Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a surface mounting |
NXP |
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