IRFZ34N डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ34N FEATURES ·Advanced Process Technology ·Dynamic dv/dt Rating ·175°C Operating Temperature ·Fast Switching ·Fully A

PD - 94807 Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Lead-Free IRFZ34NPbF HEXFET® Power MOSFET D VDSS = 55V RDS(

IRFZ34N HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature Fast Switching Fully Avalanche Rated VDSS=55V RDS(on)=0.040Ω ID=26A Description Fifth Generation HEX

PD - 9.1311A IRFZ34NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche R

l Advanced Process Technology l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free G Description Fifth Generatio

PD - 94807 IRFZ34NPbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Lead-Free Description Fifth

PD - 9.1311A IRFZ34NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche R