डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFW730S | Power MOSFET $GYDQFHG 3RZHU 026)(7
IRFW730S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage |
Fairchild Semiconductor |
|
IRFW730B | 400V N-Channel MOSFET | Fairchild Semiconductor |
|
IRFW730A | Power MOSFET | Samsung |
|
IRFW730S | Power MOSFET | Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |