IRFU410 डाटा शीट PDF( Datasheet )

IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced powe

www.DataSheet4U.com IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. T

www.DataSheet4U.com PD - 94728 AUTOMOTIVE MOSFET IRFR4104 IRFU4104 HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable o

PD - 95425B IRFR4104PbF IRFU4104PbF HEXFET® Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up t

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤45mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and re

www.DataSheet4U.com PD - 91302C IRFR/U4105 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount (IRFR4105) Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated D VDSS = 55V G S R