IRFSL4510 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche a