IRFRC20 डाटा शीट PDF( Datasheet )

iscN-Channel MOSFET Transistor IRFRC20 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =4.4Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to

www.vishay.com IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs

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