IRFR9024 डाटा शीट PDF( Datasheet )

IRFR9024 August 1999 DISTRIBUTION GROUP* IRFR9024 P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency

IRFR9024 August 1999 DISTRIBUTION GROUP* IRFR9024 P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency

IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 60 VGS = - 10 V 19 5.4 11 Singl

PD - 9.1506 PRELIMINARY l l l l l l l IRFR/U9024N HEXFET® Power MOSFET D Ultra Low On-Resistance P-Channel Surface Mount (IRFR9024N) Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Full

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤175mΩ(@VGS= -10V; ID= -6.6A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variat