IRFR8314 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFR8314, IIRFR8314 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.2mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev

IRFR8314PbF Application Optimized for UPS/Inverter Applications Low Voltage Power Tools Benefits Fully Characterized Avalanche Voltage and Current Lead-Free, RoHS Compliant HEXFET® Po