IRFR825TR डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFR825TR,IIRFR825TR ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev

PD - 96433A IRFR825TRPbF HEXFET® Power MOSFET Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications VDSS RDS(on) typ. Trr typ. ID 500V 1.05Ω 92ns