IRFR812 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFR812, IIRFR812 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.85Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic

PD -97773 IRFR812TRPbF Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications HEXFET® Power MOSFET VDSS RDS(on) typ. Trr typ. 500V 1.85Ω 75ns D ID 3