IRFR540Z डाटा शीट PDF( Datasheet )

APPROVED PD - TBD AUTOMOTIVE MOSFET Features lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax Description Specifi

isc N-Channel MOSFET Transistor IRFR540Z, IIRFR540Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤28.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description This HEXFET® P