IRFR320 डाटा शीट PDF( Datasheet )

IRFR320, IRFU320 Data Sheet July 1999 File Number 2412.3 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced powe

www.vishay.com IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs

IRFR320, IRFU320 Data Sheet July 1999 File Number 2412.3 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced powe

iscN-Channel MOSFET Transistor IRFR320 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤1.8Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum L

  
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IRFR320B / IRFU320B March 2001 IRFR320B / IRFU320B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, plana