IRFR224 डाटा शीट PDF( Datasheet )

$GYDQFHG 3RZHU 026)(7 IRFR224 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage

www.vishay.com IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 14 2.7 7.8 Single D D

iscN-Channel MOSFET Transistor IRFR224 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤1.1Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum L

  
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IRFR224B / IRFU224B November 2001 IRFR224B / IRFU224B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl