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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFR220 | N-Channel Power MOSFETs IRFR220, IRFU220
Data Sheet July 1999 File Number
2410.2
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced powe |
Intersil Corporation |
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IRFR220 | Power MOSFET www.vishay.com
IRFR220, IRFU220, SiHFR220, SiHFU220
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
D G
GS
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs ( |
Vishay Siliconix |
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IRFR220 | Power MOSFET |
International Rectifier |
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IRFR220 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.8Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·D |
INCHANGE |
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IRFR220A | Advanced Power MOSFET www.DataSheet4U.com
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 |
Fairchild Semiconductor |
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IRFR220B | 200V N-Channel MOSFET IRFR220B / IRFU220B
November 2001
IRFR220B / IRFU220B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl |
Fairchild Semiconductor |
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IRFR220B | 200V N-Channel MOSFET IRFR220B / IRFU220B
IRFR220B / IRFU220B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DM |
ON Semiconductor |
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