IRFR120Z डाटा शीट PDF( Datasheet )

AUTOMOTIVE MOSFET Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax G PD - 94754 IRFR120Z I

isc N-Channel MOSFET Transistor IRFR120Z, IIRFR120Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤190mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free Description This HEXFET® Power