IRFR120 डाटा शीट PDF( Datasheet )

IRFR120, IRFU120 Data Sheet July 1999 File Number 2414.2 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced powe

www.vishay.com IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 100 VGS = 10 V Qg (Max.) (nC) 16 Qgs (nC) Qgd (nC) 4.4 7.7 Configuration Single

PD - 91318B IRFR/U1205 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount (IRFR1205) Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V G S RDS(on) = 0.027Ω ID

isc N-Channel MOSFET Transistor IRFR1205, IIRFR1205 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤27mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi

PD - 95600A IRFR/U1205PbF • Lead-Free www.irf.com 1 12/9/04 http://www.Datasheet4U.com IRFR/U1205PbF 2 www.irf.com http://www.Datasheet4U.com IRFR/U1205PbF www.irf.com 3 http://www.Datasheet4U.c

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 10