IRFR1018E डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFR1018E, IIRFR1018E ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.4mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and D