डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFR1010Z | AUTOMOTIVE MOSFET PD - 96897
AUTOMOTIVE MOSFET
Features
Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax
l l
IRFR1010Z IRFU1010Z
HEXFE |
International Rectifier |
|
IRFR1010Z | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRFR1010Z, IIRFR1010Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤7.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d |
INCHANGE |
|
IRFR1010ZPBF | AUTOMOTIVE MOSFET PD - 95951
AUTOMOTIVE MOSFET
Features
l l l l l l
IRFR1010ZPbF IRFU1010ZPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |