IRFPG40 डाटा शीट PDF( Datasheet )

IRFPG40 Data Sheet July 1999 File Number 2879.2 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 4.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu

Power MOSFET IRFPG40, SiHFPG40 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 1000 VGS = 10 V 120 16 65 Single 3.5 TO-247 D S D G G S N-Channel MOS

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