IRFPC60LC डाटा शीट PDF( Datasheet )

IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 600 VGS = 10 V 120 Qgs (nC) 29 Qgd (nC) 48 Configuration Single 0.40 D TO-247AC G S D G S N

HEXFET® Power MOSFET PD - 9.1234 IRFPC60LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive

iscN-Channel MOSFET Transistor IRFPC60LC ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤0.4Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum

PD - 99438 HEXFET® Power MOSFET l l l l l l l IRFPC60LC-P D Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt