डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFPC60 | Power MOSFET www.vishay.com
IRFPC60
Vishay Siliconix
Power MOSFET
D TO-247AC
G
S
D G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
210 26 110 |
Vishay |
|
IRFPC60 | Power MOSFET |
International Rectifier |
|
IRFPC60LC | Power MOSFET IRFPC60LC, SiHFPC60LC
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
600 VGS = 10 V
120
Qgs (nC)
29
Qgd (nC)
48
Configuration
Single
0.40
D
TO-247AC
G
S
D G
S N |
Vishay |
|
IRFPC60LC | Power MOSFET HEXFET® Power MOSFET
PD - 9.1234
IRFPC60LC
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive |
International Rectifier |
|
IRFPC60LC | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFPC60LC
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤0.4Ω @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum |
INCHANGE |
|
IRFPC60LC-P | HEXFET Power MOSFET PD - 99438
HEXFET® Power MOSFET
l l l l l l l
IRFPC60LC-P
D
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt |
International Rectifier |
|
IRFPC60PbF | Power MOSFET • Lead-Free
PD - 95059
IRFPC60PbF
Document Number: 91245
04/04/06
www.vishay.com
IRFPC60PbF
Document Number: 91245
www.vishay.com
IRFPC60PbF
Document Number: 91245
www.vishay.com
IRFPC60PbF
Documen |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |