डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFP4668 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRFP4668,IIRFP4668
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤9.7mΩ ·Enhancement mode:
Vth =3.0 to 5.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Mini |
INCHANGE |
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IRFP4668PBF | HEXFET Power MOSFET PD -97140
IRFP4668PbF
HEXFET® Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circu |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |