IRFP460 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP460 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Ma

$GYDQFHG 3RZHU 026)(7 IRFP460 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage

IRFP460 Data Sheet July 1999 File Number 2291.3 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, te

IRFP460 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID IRFP460 500V < 0.27Ω 18.4A s TYPICAL RDS(on) = 0.22Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TEST

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cyclin

www.vishay.com IRFP460 Vishay Siliconix Power MOSFET TO-247 D S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (max.) (nC) Qgs (nC) Qgd (nC) 500 VGS = 10 V 210 29 110 0.27 Configura