IRFP450 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP450 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max

IRFP450 Data Sheet July 1999 File Number 2331.3 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, te

® IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH™ MOSFET TYPE V DSS RDS(on) ID IRFP450 500 V < 0.4 Ω 14 A s TYPICAL RDS(on) = 0.33 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCH

www.vishay.com IRFP450 Vishay Siliconix Power MOSFET D TO-247 G S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 150 20 80 Sin

Standard Power MOSFET N-Channel Enhancement Mode IRFP 450 VDSS = 500 V ID(cont) = 14 A RDS(on) = 0.40 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt PD T J TJM T stg Md Weight TJ =

Data Sheet January 2002 IRFP450 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guar