IRFP4410Z डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFP4410Z，IIRFP4410Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.0mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Mi

PD - 97309A IRFP4410ZPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Ci